Optical properties of (113) GaAs/AlAs superlattices grown by molecular beam epitaxy and atomic layer molecular beam epitaxy
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Molecular beam epitaxy and properties of GaAsBi/GaAs quantum wells grown by molecular beam epitaxy: effect of thermal annealing
We have grown GaAsBi quantum wells by molecular beam epitaxy. We have studied the properties of a 7% Bi GaAsBi quantum well and their variation with thermal annealing. High-resolution X-ray diffraction, secondary ion mass spectrometry, and transmission electron microscopy have been employed to get some insight into its structural properties. Stationary and time-resolved photoluminescence shows ...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 1995
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.359523